S1JLHM2G
Taiwan Semiconductor Corporation
Product No:
S1JLHM2G
Manufacturer:
Package:
Sub SMA
Batch:
-
Datasheet:
Description:
DIODE GEN PURP 600V 1A SUB SMA
Quantity:
In Stock : Please Inquiry
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
| Mfr | Taiwan Semiconductor Corporation |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | DO-219AB |
| Product Status | Active |
| Base Product Number | S1J |
| Capacitance @ Vr, F | 9pF @ 4V, 1MHz |
| Supplier Device Package | Sub SMA |
| Reverse Recovery Time (trr) | 1.8 µs |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 1A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Information
Follow Us
Quick Links
