SCT50N120

STMicroelectronics

Product No:

SCT50N120

Manufacturer:

STMicroelectronics

Package:

HiP247™

Batch:

-

Datasheet:

Description:

SICFET N-CH 1200V 65A HIP247

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr STMicroelectronics
Series -
Package Tube
FET Type N-Channel
Vgs (Max) +25V, -10V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 3V @ 1mA
Base Product Number SCT50
Operating Temperature -55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V
Power Dissipation (Max) 318W (Tc)
Supplier Device Package HiP247™
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 20 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 20V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)