SCTL90N65G2V

STMicroelectronics

Product No:

SCTL90N65G2V

Manufacturer:

STMicroelectronics

Package:

PowerFlat™ (8x8) HV

Batch:

-

Datasheet:

Description:

SILICON CARBIDE POWER MOSFET 650

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr STMicroelectronics
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) +22V, -10V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 5V @ 1mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 24mOhm @ 40A, 18V
Power Dissipation (Max) 935W (Tc)
Supplier Device Package PowerFlat™ (8x8) HV
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 3380 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 18V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)