STMicroelectronics
Product No:
SCTW60N120G2
Manufacturer:
Package:
HiP247™
Batch:
-
Datasheet:
-
Description:
DISCRETE
Quantity:
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Mfr | STMicroelectronics |
Series | - |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | +18V, -5V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Base Product Number | SCTW60 |
Operating Temperature | -55°C ~ 200°C (TJ) |
Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 18V |
Power Dissipation (Max) | 389W (Tc) |
Supplier Device Package | HiP247™ |
Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 8 V |
Drain to Source Voltage (Vdss) | 1200 V |
Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 800 V |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |