SCTW60N120G2

STMicroelectronics

Product No:

SCTW60N120G2

Manufacturer:

STMicroelectronics

Package:

HiP247™

Batch:

-

Datasheet:

-

Description:

DISCRETE

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr STMicroelectronics
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) +18V, -5V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 5V @ 1mA
Base Product Number SCTW60
Operating Temperature -55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 18V
Power Dissipation (Max) 389W (Tc)
Supplier Device Package HiP247™
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 8 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1969 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) 18V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)