SCTWA60N120G2-4

STMicroelectronics

Product No:

SCTWA60N120G2-4

Manufacturer:

STMicroelectronics

Package:

TO-247-4

Batch:

-

Datasheet:

Description:

SILICON CARBIDE POWER MOSFET 120

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr STMicroelectronics
Series -
Package Tube
FET Type N-Channel
Vgs (Max) +22V, -10V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-4
Product Status Active
Vgs(th) (Max) @ Id 5V @ 1mA
Operating Temperature -55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 18V
Power Dissipation (Max) 388W (Tc)
Supplier Device Package TO-247-4
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 18 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1969 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) 18V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)