SI2319DDS-T1-GE3
Vishay Siliconix
Product No:
SI2319DDS-T1-GE3
Manufacturer:
Package:
SOT-23-3 (TO-236)
Batch:
-
Datasheet:
Description:
MOSFET P-CH 40V 2.7A/3.6A SOT23
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen III |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SI2319 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.7A, 10V |
| Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta), 3.6A (Tc) |
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