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SIDC09D60E6YX1SA1

Infineon Technologies

Product No:

SIDC09D60E6YX1SA1

Manufacturer:

Infineon Technologies

Package:

Sawn on foil

Batch:

-

Datasheet:

Description:

DIODE GP 600V 20A WAFER

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Infineon Technologies
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Bulk
Technology Standard
Mounting Type Surface Mount
Package / Case Die
Product Status Obsolete
Base Product Number SIDC09D60
Capacitance @ Vr, F -
Supplier Device Package Sawn on foil
Reverse Recovery Time (trr) 150 ns
Current - Reverse Leakage @ Vr 27 µA @ 600 V
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 20A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A