SIDC09D60E6YX1SA1
Infineon Technologies
Product No:
SIDC09D60E6YX1SA1
Manufacturer:
Package:
Sawn on foil
Batch:
-
Datasheet:
Description:
DIODE GP 600V 20A WAFER
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Infineon Technologies |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Bulk |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Product Status | Obsolete |
| Base Product Number | SIDC09D60 |
| Capacitance @ Vr, F | - |
| Supplier Device Package | Sawn on foil |
| Reverse Recovery Time (trr) | 150 ns |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 20A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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