Infineon Technologies
Product No:
SIDC30D120E6X1SA2
Manufacturer:
Package:
Sawn on foil
Batch:
-
Datasheet:
-
Description:
DIODE GP 1.2KV 35A WAFER
Quantity:
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Mfr | Infineon Technologies |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Series | - |
Package | Bulk |
Technology | Standard |
Mounting Type | Surface Mount |
Package / Case | Die |
Product Status | Discontinued at Digi-Key |
Base Product Number | SIDC30D |
Capacitance @ Vr, F | - |
Supplier Device Package | Sawn on foil |
Current - Reverse Leakage @ Vr | 27 µA @ 1200 V |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) | 35A |
Operating Temperature - Junction | -55°C ~ 150°C |
Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 35 A |