SIE836DF-T1-E3
Vishay Siliconix
Product No:
SIE836DF-T1-E3
Manufacturer:
Package:
10-PolarPAK® (SH)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 200V 18.3A 10POLARPK
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 10-PolarPAK® (SH) |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Base Product Number | SIE836 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 4.1A, 10V |
| Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
| Supplier Device Package | 10-PolarPAK® (SH) |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18.3A (Tc) |
2000+Daily average RFQ Volume
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15,000 ㎡In-stock Warehouse
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