SISH410DN-T1-GE3

Vishay Siliconix

Product No:

SISH410DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SH

Batch:

-

Datasheet:

Description:

MOSFET N-CH 20V 22A/35A PPAK

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8SH
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number SISH410
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Supplier Device Package PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Drain to Source Voltage (Vdss) 20 V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 35A (Tc)