SSM3J168F,LXHF
Toshiba Semiconductor and Storage
Product No:
SSM3J168F,LXHF
Manufacturer:
Package:
S-Mini
Batch:
-
Datasheet:
-
Description:
SMOS LOW RON VDS:-60V VGSS:+10/-
Quantity:
In Stock : Please Inquiry
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
| Mfr | Toshiba Semiconductor and Storage |
| Series | Automotive, AEC-Q101, U-MOSVI |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | +10V, -20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 200mA, 10V |
| Power Dissipation (Max) | 600mW (Ta) |
| Supplier Device Package | S-Mini |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 82 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Information
Follow Us
Quick Links
