SSM3J66MFV,L3XHF

Toshiba Semiconductor and Storage

Product No:

SSM3J66MFV,L3XHF

Package:

VESM

Batch:

-

Datasheet:

-

Description:

AUTO AEC-Q SS MOS P-CH LOW VOLTA

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) +6V, -8V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case SOT-723
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 390mOhm @ 800mA, 4.5V
Power Dissipation (Max) 150mW (Ta)
Supplier Device Package VESM
Gate Charge (Qg) (Max) @ Vgs 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss) 20 V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C 800mA (Ta)