SSM6G18NU,LF
Toshiba Semiconductor and Storage
Product No:
SSM6G18NU,LF
Manufacturer:
Package:
6-µDFN (2x2)
Batch:
-
Datasheet:
-
Description:
MOSFET P-CH 20V 2A 6UDFN
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Base Product Number | SSM6G18 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 1A, 4.5V |
| Power Dissipation (Max) | 1W (Ta) |
| Supplier Device Package | 6-µDFN (2x2) |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
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