TDTA123J,LM

Toshiba Semiconductor and Storage

Product No:

TDTA123J,LM

Package:

SOT-23-3

Batch:

-

Datasheet:

-

Description:

PB-F BIAS RESISTOR BUILT-IN TRAN

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 320 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Transistor Type PNP - Pre-Biased
Base Product Number TDTA123
Resistor - Base (R1) 2.2 kOhms
Frequency - Transition 250 MHz
Supplier Device Package SOT-23-3
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector (Ic) (Max) 100 mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50 V