TJ60S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
Product No:
TJ60S06M3L(T6L1,NQ
Manufacturer:
Package:
DPAK+
Batch:
-
Datasheet:
-
Description:
MOSFET P-CH 60V 60A DPAK
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | +10V, -20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Base Product Number | TJ60S06 |
| Operating Temperature | 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 30A, 10V |
| Power Dissipation (Max) | 100W (Tc) |
| Supplier Device Package | DPAK+ |
| Gate Charge (Qg) (Max) @ Vgs | 156 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7760 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
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