TK100L60W,VQ

Toshiba Semiconductor and Storage

Product No:

TK100L60W,VQ

Package:

TO-3P(L)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 100A TO3P

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-3PL
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 5mA
Base Product Number TK100L60
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 18mOhm @ 50A, 10V
Power Dissipation (Max) 797W (Tc)
Supplier Device Package TO-3P(L)
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)