TK22E10N1,S1X

Toshiba Semiconductor and Storage

Product No:

TK22E10N1,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N CH 100V 52A TO220

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 300µA
Base Product Number TK22E10
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 13.8mOhm @ 11A, 10V
Power Dissipation (Max) 72W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)