TK35N65W5,S1F

Toshiba Semiconductor and Storage

Product No:

TK35N65W5,S1F

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 35A TO247

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 2.1mA
Base Product Number TK35N65
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 95mOhm @ 17.5A, 10V
Power Dissipation (Max) 270W (Tc)
Supplier Device Package TO-247
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 35A (Ta)