Toshiba Semiconductor and Storage
Product No:
TK4A80E,S4X
Manufacturer:
Package:
TO-220SIS
Batch:
-
Datasheet:
-
Description:
PB-FPOWERMOSFETTRANSISTORTO-220S
Quantity:
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Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 400µA |
Operating Temperature | 150°C |
Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2A, 10V |
Power Dissipation (Max) | 35W (Tc) |
Supplier Device Package | TO-220SIS |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Drain to Source Voltage (Vdss) | 800 V |
Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |