TK4R3E06PL,S1X

Toshiba Semiconductor and Storage

Product No:

TK4R3E06PL,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 80A TO220

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series U-MOSIX-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 500µA
Base Product Number TK4R3E06
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 7.2mOhm @ 15A, 4.5V
Power Dissipation (Max) 87W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 48.2 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)