TPN1600ANH,L1Q
Toshiba Semiconductor and Storage
Product No:
TPN1600ANH,L1Q
Manufacturer:
Package:
8-TSON Advance (3.1x3.1)
Batch:
-
Datasheet:
-
Description:
MOSFET N CH 100V 17A 8TSON-ADV
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Base Product Number | TPN1600 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 8.5A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 42W (Tc) |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
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