Toshiba Semiconductor and Storage
Product No:
TRS10E65C,S1Q
Manufacturer:
Package:
TO-220-2L
Batch:
-
Datasheet:
-
Description:
DIODE SIL CARB 650V 10A TO220-2L
Quantity:
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Mfr | Toshiba Semiconductor and Storage |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Tube |
Technology | SiC (Silicon Carbide) Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Product Status | Obsolete |
Base Product Number | TRS10E65 |
Capacitance @ Vr, F | - |
Supplier Device Package | TO-220-2L |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 10A |
Operating Temperature - Junction | 175°C (Max) |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |