TSM60N1R4CH C5G
Taiwan Semiconductor Corporation
Product No:
TSM60N1R4CH C5G
Manufacturer:
Package:
TO-251 (IPAK)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 600V 3.3A TO251
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Taiwan Semiconductor Corporation |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | TSM60 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| Power Dissipation (Max) | 38W (Tc) |
| Supplier Device Package | TO-251 (IPAK) |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
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