UPA2810T1L-E2-AY

Renesas Electronics America Inc

Product No:

UPA2810T1L-E2-AY

Package:

8-DFN3333 (3.3x3.3)

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 30V 13A 8DFN

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Renesas Electronics America Inc
Series -
Package Bulk
FET Type P-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 12mOhm @ 13A, 10V
Power Dissipation (Max) 1.5W (Ta)
Supplier Device Package 8-DFN3333 (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1860 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)