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VS-3C10ET07T-M3

Vishay General Semiconductor - Diodes Division

Product No:

VS-3C10ET07T-M3

Package:

TO-220AC

Batch:

-

Datasheet:

Description:

650 V POWER SIC GEN 3 MERGED PIN

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Vishay General Semiconductor - Diodes Division
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Base Product Number VS-3C10
Capacitance @ Vr, F 445pF @ 1V, 1MHz
Supplier Device Package TO-220AC
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 55 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 10 A