XPN9R614MC,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPN9R614MC,L1XHQ

Package:

8-TSON Advance-WF (3.1x3.1)

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 40V 40A 8TSON

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series Automotive, AEC-Q101, U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) +10V, -20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.1V @ 500µA
Base Product Number XPN9R614
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V
Power Dissipation (Max) 840mW (Ta), 100W (Tc)
Supplier Device Package 8-TSON Advance-WF (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)